| 摘要 |
PURPOSE:To control the dimensions of load currents easily by forming polycrystalline silicon along the side wall of a groove and constituting a resistance section. CONSTITUTION:A resist 18 is removed, polycrystalline silicon 19 is deposited, and an insulating applying film 20 is applied onto the whole surface to completely bury a groove. Only the surface section of the insulating applying film 20 is removed, the polycrystalline silicon 19 is removed through etching while using an silicon nitride film 14 and the insulating applying film 20 leaving in the groove as etching masks to leave the polycrystalline silicon 19 only in the groove, and an insulating applying film 21 is applied onto the whole surface. An impurity is diffused to the polycrystalline silicon 19 from the insulating applying film 21 containing the impurity through heat treatment, the insulating applying film 21 is removed, and an silicon dioxide film 22 is shaped onto the surface of the polycrystalline silicon 19 through a thermal oxidation method. Lastly, only the silicon dioxide film 22 is removed through etching, and polycrystalline silicon 23 is deposited, thus forming an electrode. |
