发明名称 PRODUCTION OF FILM FOR MAGNETIC RECORDING MEDIUM
摘要 PURPOSE:To form a superior magnetic film by carrying out sputtering with a Co-Ni target in a gaseous N2-Ar mixture to form a film on a substrate at room temp. - a specified temp. and by heat treating the film at a specified temp. in a nonoxidizing atmosphere so as to regulate the Ni and N contents to a specified percentage each. CONSTITUTION:Sputtering is carried out with a Co-Ni target in an atmosphere consisting of N2 and Ar in 1:1 volume ratio under reduced pressure to form a thin Co-Ni film contg. 30-50atom% N on a substrate of Al or the like at room temp. - 300 deg.C. Since the temp. of the substrate is raised by sputtering, it can be kept lower than the temp. during the following heat treatment by carrying out sputtering at room temp. The Co-Ni film is then heated at 300-450 deg.C in a nonoxidizing atmosphere under reduced pressure to form a magnetic film consisting of 1-3atom% N, 10-30atom% Ni and the balance Co. The deformation of the substrate of Al or the stripping of the film from the substrate of glass due to the difference in coefft. of thermal expansion is prevented by reducing the N content at 300-450 deg.C, and a superior magnetic recording medium for high density recording is obtd.
申请公布号 JPS61153827(A) 申请公布日期 1986.07.12
申请号 JP19840238742 申请日期 1984.11.13
申请人 NATL RES INST FOR METALS;HITACHI METALS LTD 发明人 MAEDA HIROSHI;ENDO SHIGEO;MURAKAMI SHIRO;FUJII SHIGEO
分类号 C22C19/07;C23C14/00;C23C14/14;G11B5/85;G11B5/851;H01F10/16;H01F41/18 主分类号 C22C19/07
代理机构 代理人
主权项
地址