| 摘要 |
PURPOSE:To prevent the generation of defective sealing by obviating the positional displacement of a chip shape and glass for sealing by applying glass for sealing on the chip side. CONSTITUTION:A passivation film 1 is formed onto the surface of an Si substrate 2. Powdered glass is applied uniformly onto the back of the Si substrate 2, and an equal glass film 3 for sealing is shaped through baking. Patterns on the surface of the Si substrate 2 are positioned, and the glass film 3 for sealing on the back of the Si substrate 2 is patterned 4 to a desired shape. A diaphragm is formed through anisotropic etching while using the glass film 3 for sealing on the back of the Si substrate 2 as a mask. the passivation films 1 in pad sections on the surface of the Si substrate 2 are etched selectively, and windows 6 are shaped, thus completing a wafer. Lastly, the wafer is divided into chips, and heated under a vacuum and sealed onto a ceramic substrate 7. |
