发明名称 SELECTIVE FILM FORMATION ON THE SIDES AND THE PERIPHERY OF A LAMINATED BODY
摘要 PURPOSE:To flatten the upper surface of CTF, enable a uniform orientation treatment and prevent peeling of the laminated body from the glass substrate by truing up the upper surface of the laminated body and that of organic resin filling the periphery of the body to make a roughly flat surface. CONSTITUTION:After a chromium film 2 has been formed on the upper surface of a transparent insulating substrate 1, a non-linear element comprizing nonsingle crystal semiconductor 3 is formed on the film 2 and sufficient evacuation is carried out. Subsequently by using a mixture of silan and DMS(Si(CH3)3), to which B2H6 is added if necessary, a I-type nonsinglecrystal semiconductor is formed, followed by sufficient evacuation. On this semiconductor a N-type semiconductor is laminated to form a hetero junction, Si-SixC1-x(0<X<1), of NP<->N junction, on which, further, a multilayer film of chromium 4 and alumin ium 8 for shielding light is laminated as the second electrode. In addition, anisotropic plasma etching is given to form a laminated body 7 using the first photomask A so that the peripheral portion 27 may become vertical. Finally a photosensitive polyimide resin 6 is formed on the whole surface.
申请公布号 JPS61154039(A) 申请公布日期 1986.07.12
申请号 JP19840277412 申请日期 1984.12.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MASE AKIRA;KONUMA TOSHIMITSU;SAKAMA MITSUNORI;INUSHIMA TAKASHI;YAMAZAKI SHUNPEI
分类号 B32B33/00;B05D3/06;B05D5/12;H01L21/312;H01L27/12;H05K3/00 主分类号 B32B33/00
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