发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To change over and use the same device to a low power consumption type or high speed type in accordance with the purpose by changing over and setting a control signal with a row address buffer and a column address buffer. CONSTITUTION:When an electric power source is turned on, a change-over signal VD is inputted from an external circuit to a selecting circuit 16, and by the output, a row address buffer 14 and a column address buffer 15 execute the usual action with a constant level signal. Next, for initialization when the level of the signal VD is changed to a higher level, a chip enable signal CE' is outputted through the selecting circuit 16 and supplied to the buffers 14 and 15. Consequently, in accordance with the signal VD, changing-over and setting can be executed concerning whether a memory array 11 is controlled by the signal CE' or the array is always controlled by a constant signal.
申请公布号 JPS61153895(A) 申请公布日期 1986.07.12
申请号 JP19840278260 申请日期 1984.12.27
申请人 TOSHIBA CORP 发明人 HONMA TAKAAKI
分类号 G11C7/00;G11C11/34;G11C11/413 主分类号 G11C7/00
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