发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To simplify an oscillating wavelength, and to reduce oscillating threshold currents by forming structure, in which a plurality of light-emitting layers are supoerposed and shaped through insulating layers and each light-emitting layer is conducted independently and oscillated, in a surface light-emitting laser. CONSTITUTION:A first laser is is constituted by an n-InP layer 2 as a buffer layer, an InGaAsP layer 3 as a first active layer, a p-InP layer 4, and a p- InGaAsP layer 5 as a contact layer. Light is emitted by double hetero-junctions constituted while holding the first active layer 3 consisting of InGaAsP by the n-InP layer 2 and the p-InP layer 4. A high-resistance InP layer 6 as an insulating layer insulates a second layer from the first laser. The second laser is constituted by an n-InP layer 7, and InGaAsP layer 8 as a second active layer, a p-InP layer 9 and a p-InGaAsP layer as a contact layer. Light is emitted by double hetero-junctions constituted while holding the second active layer 8 composed of InGaAsP by the n-InP layer 7 and the p-InP layer 9.
申请公布号 JPS61154089(A) 申请公布日期 1986.07.12
申请号 JP19840277516 申请日期 1984.12.26
申请人 FUJITSU LTD 发明人 HOSHINO MASATAKA
分类号 H01L33/12;H01L33/30;H01S5/00;H01S5/183 主分类号 H01L33/12
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