| 摘要 |
PURPOSE:To decrease the deterioration in the characteristics of a semiconductor device in an environment such as in a space where radiation is present, by contacting metal wirings for a source and a drain with a semiconductor substrate at the outside of the periphery of a diffused layer other than a channel region for an MOS transistor, and providing a Schottky junction part. CONSTITUTION:Metal wirings 41 are ohmic-contacted with diffused layers 31 of a source and a drain. A Schottky junction 61 is formed between the outside of th periphery of each diffused layer 31 (other than the channel region of an MOS transistor) and a semiconductor substrate 11. The Schottky junction 61 has higher radiation resistance than that in the interface between a silicon film and the semiconductor substrate. The junction surrounds the diffused layer of the source or th drain. Thus leakage between the source and the drain or the neighboring transistors through an element isolating film can be suppressed. |
