| 摘要 |
<p>PURPOSE:To prevent the tearing of electrodes and the thermal destruction of an MIM element by patterning a lower electrode connecting an insulator and transparent electrode then forming the transparent electrode, patterning the insulator and metallic electrode thereon so as to cross the lower metal and patterning a thick insulator covering the same. CONSTITUTION:The film of metal such as Cr or Au is formed by a sputtering or vapor deposition method on an insulating substrate and is patterned to form the lower metallic electrode 1. The transparent electrode 2 is then patterned on the metallic electrode so as to overlap partly thereon and the insulator film 3 consisting of Ta2O5, etc. is formed by a reactive sputtering, ion plating or anodic oxidation method on the film 1 and is patterned so as to intersect therewith. The film of metal such as Ta is then formed on the insulator 3 and is patterned to form the upper electrode 4. The thick film of an insulator 5 such as SiO2 is formed on the electrode 4 and is patterned.</p> |
