| 摘要 |
PURPOSE:To reduce the rate in which the capacitances of an insulator layer supporting a beam lead and a semiconductor section add to an inter-electrode capacitance as parasitic capacitances, and to improve high-frequency characteristics by partially removing the semiconductor immediately under the beam lead. CONSTITUTION:An active layer 2 is formed to the upper section of a high- resistance semiconductor substrate layer 1, a semiconductor element such as the shot of a Schottky barrier diode and an ohmic electrode 5 are shaped onto the layer 2 through holes bored to an insulating film 3, and beam leads 6, 6, one end sections thereof are each connected to the electrodes 4, 5, are both lead out to the outside along the upper section of the insulating film 3. Semiconductors just under the beam leads 6 on its midway of a projection to the outside of a substrate region from the electrodes 4, 5 of the beam leads 6 are removed partially to form air gaps 7. |
