| 摘要 |
1. Plastics-encapsulated semiconductor device comprising a semiconductor body (1) which, at least on one side, is provided with electrodes and conducting leads, with the entire surface of the semiconductor body, Including the electrodes and conducting leads, being covered by a coating (3) of silicon nitride, characterized in that the coating (3) of silicon nitride is covered with a coating (4) of silicon dioxide. |
