| 摘要 |
PURPOSE:To enable to obtain uniform diffusion of Al in the surface of a semiconductor substrate by a method wherein an aluminum nitride (AlN) thin film formed according to the sputtering method on the surface of the semiconductor substrate is used as a diffusion source to diffuse Al in the semiconductor substrate. CONSTITUTION:A phenomenon that Al in an AlN thin film diffuses in a semiconductor crystal according to annealing at a high temperature of the AlN thin film formed according to the sputtering method is utilized. Formation of the AlN thin film according to the sputtering method is possible at the temperature of 200-400 deg.C, and thus formed AlN thin film is extremely stable at 1,000- 1,350 deg.C, which is the diffusion temperature of Al. Accordingly, the AlN thin film is formed according to the sputtering method at a low temperature, and after then by only performing annealing at 1,000-1,350 deg.C, Al can be introduced in the semiconductor from the stable Al diffusion source. |
