| 摘要 |
PURPOSE:To improve the stability and Cu depositing property of a chemical Cu plating soln. by adding an org. sulfur compound or an ethyleneamine compound to the plating soln. contg. a Cu salt, a complexing agent, a reducing agent and a pH adjusting agent or by further adding 2,2'-dipyridyl or a water soluble cyanide. CONSTITUTION:An aqueous soln. contg. a Cu ion source such as CuSO4 or CuCl2, a complexing agent such as EDTA or Rochelle salt, a reducing agent such as formaldehyde and a pH adjusting agent such as NaOH is prepd. as a chemical Cu plating soln., and 0.1-10mg/l org. sulfur compound such as thiourea or 1-500m/l ethyleneamine compound is added to the plating soln. In order to improve the ductility of a plated Cu film, 1-100mg/l 2,2'-dipyridyl or 1-100mg/l water soluble cyanide such as NaCn may be added. The chemical Cu plating soln. having superior stability and capable of rapidly depositing Cu is obtd. |
