发明名称 |
THIN FILM FORMING DEVICE |
摘要 |
PURPOSE:To make possible the formation of a uniform film deposited by evaporation to a uniform thickness on a substrate by providing an equipotential surface on the rear side of the substrate disposed to face a vapor deposition material to be evaporated by heating or ion bombardment in proximity thereto. CONSTITUTION:An electron beam 9 generated by a cathode 7 is controlled in orbit by the magnetic field of a magnet 8 so as to irradiate the vapor deposition material 6 contained in a vapor deposition material crucible 5 by which said material is heated and evaporated. On the other hand, the disk substrate 3 fixed via a keep plate 4 to a substrate holder 1 is disposed to face said material 6. The vapor flow 10 evaporated from the material 6 arrives at the substrate 3 to form a thin film on the surface of the substrate 3. A plate 2 which realizes the equipotential surface is disposed between the holder 1 and the substrate 3 in the thin film forming device constituted in the above-mentioned manner. The equipotential surface thereof is provided to face the surface of the substrate 3 on the side where the film is not formed and in proximity to at least part of said surface. The electric charge on the substrate 3 is thus uniformly distributed and a uniform film having uniform film thickness is formed.
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申请公布号 |
JPS61153273(A) |
申请公布日期 |
1986.07.11 |
申请号 |
JP19840277927 |
申请日期 |
1984.12.26 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KOFUKADA MIEKO;KASHIHARA TOSHIAKI |
分类号 |
H01F41/20;C23C14/24;C23C14/50;C23C14/54;G11B5/85 |
主分类号 |
H01F41/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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