| 摘要 |
PURPOSE:To obtain a high contrast resist profile and to prevent the undercutting of the resist by adding a cationic surfactant and a nonionic surfactant to an aqueous soln. of quat. ammonium hydroxide. CONSTITUTION:A cationic surfactant and a water soluble nonionic surfactant are added to an aqueous soln. of quat. ammonium hydroxide such as tetramethylammonium hydroxide to obtain a developer composition for a positive type photoresist. The cationic surfactant is a quat. ammonium slat represented by formula I (where R1 is 8-18C alkyl and X is halogen), a pyridium salt or a picolinium salt represented by formula II (where R2 is 12-16C alkyl, R3 is H or methyl, and X is halogen), and it is added by 0.004-0.4wt%. An ether type nonionic surfactant such as polyxyethylene or an ether type special nonionic surfactant is effective as the water soluble nonionic surfactant, and it is added by 0.01-0.5wt%.
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