| 摘要 |
PURPOSE:To obtain a magnetoresistance element which is excellent in the migration resistant properties, less in the generation of the thermal noise and high in the reliability by lowering the specific resistance of a 'Permalloy(R)' thin film material. CONSTITUTION:The specific resistance of 'Permalloy(R)' can be made to 15-20muOMEGAcm by producing a magnetoresistance element with a 'Permalloy(R)' thin film material which has been produced by the vapor deposition in <=10<-7>Torr vacuum. Therefore when the sensing current conducting to the magnetoresistance element is specified, 20-30% heat release value due to the Joule heat of the element can be diminished. Thereby the increase of migration resistant properties of the magnetoresistance element, namely, the increase of the electric conduction life and the effect of the decrease of the thermal noise are exhibited.
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