| 摘要 |
PURPOSE:To operate a semiconductor storage device without mistake immediately after holding, by compensating a high potential level by utilizing a high potential level made by an oscillator contained in the semiconductor storage device, as a power source, with regard to an internal signal being the high potential level in the course of a holding period. CONSTITUTION:A periodical signal phin for repeating periodically a high potential level and a low potential level is outputted from an oscillator which is not shown in the figure, and the periodical signal phin is inputted to a connecting point M through a capacity C. When the periodical signal phin goes to a high potential level, the connecting point M goes to a very high potential level by the capacity C, a transistor Q22 turns on, and a level PG goes to a level exceeding a power supply voltage. It is repeated and the high potential level of the signal PG is always maintained. Even if the charge is decreased due to the cause of a leak, etc. of a nodal point N after a holding state of many hours, the transistor Q23 turns on when the potential goes to a degree of a power source, and the high potential level of the nodal point N is compensated by the transistor Q23. |
