| 摘要 |
PURPOSE:To enable to form an ultrathin film at low temperature by a method wherein the raw gas adhered to the surface of a substrate and a metastable excitation molecule are reacted each other at the point isolated from an excitation molecule generating place. CONSTITUTION:A kind of raw gas source 8 is provided besides the gas source 1 to be used for generation of metastable excitation molecule, and a thin film is formed. For example, nitrogen is held in the gas source 1 as metastable excitation molecule generating gas, monosilane gas is held in the gas source 8, and said gas is used when a silicon nitride film is formed on a substrate 6. The exhaust process of a reaction chamber, the process wherein monosilane gas is adhered to the surface of the substrate 6 by introducing the monosilane gas into the reaction chamber 7, the process wherein the monosilane gas remaining in the reaction chamber is exhausted, and the process in which the metastable excitation molecule is introduced into the reaction chamber 7 are included in the process of a cycle. As a result, the ultrathin film controlled into a monomolecule and monoatomic layer can be formed at a low temperature. |
