| 摘要 |
PURPOSE:To form easily a pattern with high sensitivity and accuracy by using a homo- or copolymer of methacryloyloxyalkylpentamethyldisiloxane. CONSTITUTION:A negative type electron beam resist material composition contg. a homo- or copolymer of methacryloyloxyalkylpentamethyldisiloxane having a unit structure represented by formula 1 (where x=3 or 4) is spin-coated on an Si or SiO2 substrate and dried by heating. The resulting film is irradiated with electron beams through a desired pattern, developed with a proper developer such as toluene, and rinsed with a proper rinse such as iropropanol to form a resist pattern. When the substrate is etched through the resist pattern as a mask, accurate and fine working can be attained. |
