| 摘要 |
PURPOSE:To contrive improvement in working efficiency, to improve the reliability of inspection as well as to contrive improvement in the yield of production by a method wherein all the transfer processes of pattern to be used for inspection using a dummy wafer and the like are abbreviated, and foreign matters are inspected by performing a direct inspection on a reticle pattern. CONSTITUTION:Before a projection and exposing process is performed on the pattern of reticle 4 on a wafer 6, an X-Y table 7 is shifted, and a CCD17 is positioned at a point directly below a projection optical system 5. Under the above-mentioned condition, the pattern of the reticle 4 is projected on the CCD17, and at the same time, the X-Y table 7 is shifted in the direction of X and Y, and the CCD17 is scanned on the projected pattern 4A. At this time, the shifting of the X-Y table 7 is performed by controlling the X-Y table 7 position detecting action of a laser optical system 13 and a laser controlling circuit 14, and the driving action of a Y-driving part 11 and a table controlling circuit 12 using a stepper control circuit 16 and a central controlling part 19. |
