发明名称 |
METHOD OF FABRICATING INTEGRATED CIRCUIT STRUCTURE |
摘要 |
A lateral transistor structure having a self-aligned base and base contact is provided, together with a method for fabricating such a structure in which the base width is controlled by lateral diffusion of an impurity through a polycrystalline silicon layer. The resulting zone of impurity changes the etching characteristics of the layer and permits use of a selective etchant to remove all of the layer except the doped portion. The doped portion may then be used as a mask to define the base electrical contact, which in turn is used to provide a set-aligned base for the transistor. Dopants introduced on opposite sides of the base electrical contact create the emitter and collector. |
申请公布号 |
DE3174777(D1) |
申请公布日期 |
1986.07.10 |
申请号 |
DE19813174777 |
申请日期 |
1981.10.22 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
VORA, MADHUKAR B. |
分类号 |
H01L21/033;H01L21/3215;H01L21/331;H01L29/08;H01L29/73;(IPC1-7):H01L21/28;H01L21/30;H01L29/72 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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