| 摘要 |
PURPOSE:To obtain a high withstand voltage PNPN switch by enabling the traverse of a lower electric potential coupling part on the junction of a P type gate region reversely biased by forming the capacity of dV/dt erroneous operation prevention function outside of the P type gate region. CONSTITUTION:A capacitor 23 of the first N-type region 12 - an insulation film - the second conductor 57 is formed on the first N-type region 12. This makes the wiring 45 connected to an anode not to traverse on the junction reversely biased in a P-type gate region 13. A coupling part 59 which has elec tric potential traverses on the junction of the conductor 57 which has lower electric potential than the electric potential of the anode and the danger of a surface breakdown at the junction is mitigated. So, a stable high withstand voltage characteristic can be obtained. The equivalent circuit of a PNPN switch also contains a diode D, which can prevent a dV/dt erroneous operation excel lently. |
