发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To manufacture a semiconductor device which prevents thoroughly the crosstalk of adjacent picture elements by forming a laminate on a substrate, coating a photosensitive resin thereon, irradiating UV light on the substrate from the rear thereof and forming the top surface of the substrate to approximately the same plane. CONSTITUTION:The 1st electrode 21, a non-linear type element 2 and the 2nd electrode 15 thereof are successively laminated on the light transmittable insulating substrate 20 to constitute the laminate 17. The photosensitive polyimide resin 29 is formed over the entire surface and the substrate 20 is exposed by the UV light from the rear thereof without using a mask. The non-photosensitive projecting part above the laminate is dissolved away by a rinsing liquid. The top surface of the laminate and the top surface of the resin 29 are thereby made approximately flush with each other and the part between the picture elements 31 is etched after the formation of the 3rd electrode 23. The crosstalk between the adjacent picture elements is thus thoroughly prevented and the semiconductor device which prevents the exfoliation of the substrate and the laminate owing to a difference in thermal expansion by packing the periphery of the laminate 17 with the resin 29 is easily manufactured.</p>
申请公布号 JPS61151614(A) 申请公布日期 1986.07.10
申请号 JP19840277413 申请日期 1984.12.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 INUSHIMA TAKASHI;MASE AKIRA;KONUMA TOSHIMITSU;SAKAMA MITSUNORI;MIYAZAKI MINORU;YAMAZAKI SHUNPEI
分类号 G02F1/136;G02F1/133;G02F1/1333;G02F1/1337;G02F1/1365;G06F3/14;G06F3/147;G09F9/30;G09G3/36;H01L21/329;H01L27/14;H01L27/146 主分类号 G02F1/136
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