| 摘要 |
PURPOSE:To perform the surface processing of a substrate after carrying a gas adsorbed substrate to a processing chamber by a method wherein, within the surface processor of the substrate by photolyzing the specified gas adsorbed on the substrate surface utilizing photochemical reaction, adsorption process and exhaust process of the gas are independently performed. CONSTITUTION:The substrate F to be surface-processed is carried by a carrier system in the order of a subsidiary exhaust chamber A an adsorption chamber B a processing chamber C. The subsidiary exhaust chamber A is vacuumized up to high degree or ultra high degree of vacuum to clean up the surface of substrate F as well as to control the temperature of substrate F by means of a temperature controller 15. The adsorption chamber B kept at high degree or ultra high degree of vacuum in the initial phase of application is vacuum sealed from the subsidiary exhaust chamber A by a gate valve 11 mounted on the middle part between the two chambers A and B. The substrate F adsorbing gas on the surface thereof in the adsorption chamber B is carried to the processing chamber C through an orifice 12. Finally the surface of gas adsorbed substrate F may be irradiated with light from a light source 21 to photolyze the gas as for the surface processing of substrate F. |
