| 摘要 |
PURPOSE:To solve the clogging of pipes etc. when introducing a reactive gas from the outside by producing the reactive gas by the spattering on a target with the target consisting of a compound including the element of the reactive gas facing a semiconductor substrate. CONSTITUTION:A semiconductor wafer 1 is placed in a reactor 1 and the material of an electrode itself or that of a surface of the electrode of a target 2 facing the wafer 1 consists of a compound including the element used for etching the wafer 1 or the single substance of the element. An inert gas is introduced into the reactor and a high-frequency voltage 3 is applied between the wafer 1 and the target 2. Then the inert gas is ionized and strikes the target to produce a reactive gas thereby etching a surface of the wafer 1. Since the reaction gas is not introduced from the outside, troubles such as condensation or clogging of the reactive gas in the pipes can be solved. |
