| 摘要 |
<p>A non-volatile semiconductor device having an improved write voltage application circuit is disclosed.</p><p>The memory device is of the type having a plurality of non-volatile memory elements each coupled to a row line and a column line, a row selection circuit provided for each row line, the row selection circuit providing the row line with a selection potential when the row line is to be selected and a reference potential when the row line is not selected, and a write voltage application circuit provided for each row line for operatively applying a regulated amount of a write current to the row line in a write state. The write voltage application circuit includes a P-channel MIS transistor which is adapted to take a conductive state of a large resistance at least in a write state, and a current flowing through the above P-channel MIS transistor is derived as the regulated amount of the write current.</p> |
