| 摘要 |
PURPOSE:To enable to obtain a substrate which is especially suitable for an IC by a method wherein, after a glass thin film having SiO2 as a main ingredient and containing the spcific ratio or more of alumina, boron oxide and barium oxide is coated on one main surface of a GaAs substrate, the above is heated up to the prescribed temperature or above and at the crystalline melting point or below. CONSTITUTION:After Si<+> ions are implanted on the surface of a GaAs substrate 1 as shown by the arrows in the disgram, a glass thin film 2, having SiO2 as main ingredient and containing Al2O3 of 12% or above, a boron oxide and a barium oxide, such as the glass 7059 manufactured by Coroning Glass Works, for example, is coated by performing an RF sputtering method using Ar ion as a medium. Then, a heat treatment is performed on the substrate 1 at the temperature of 400 deg.C or above and at the temperature of crystalline melting point or below. Through these procedures, the exfoliation of the glass layer 2 to be used to prevent the evaporation of As in the substrate 1 and the generation of cracks can be prevented, and the change in crystalline characteristics due to the application of the stress generated from the difference of thermal expansion coefficient between the substrate 1 and the layer 2, on the substrate 1 can also be prevented, thereby enabling to obtain an excellent GaAs substrate to be used for an integrated circuit. After the glass layer 2 is formed, Si<+> ions are implanted, and the a heat treatment may be performed. |
