| 摘要 |
This invention relates to a wire bonding gold line used for connecting a semiconductor tip electrode with an outside lead portion. This gold wire characteristically contains gold (Au) having a purity level 99.996-99.9995 wt % and 0.0032-0.008 wt % by total weight of said gold wire of germanium (Ge) so that the electric resistance of the wire bonding gold line is reduced, while the mechanical strength such as tensile strength and high temperature strength is excellent and a gold ball can be shaped into the form of a nearly perfect sphere in the connection of the tip electrode. |
