| 摘要 |
PURPOSE:To restrain the generation of horny projections on an Si pattern by forming the Si film and a coating in order through an insulating film on a substrate and implanting the ions of the element into the coating so as to form a defect layer having a density peak on the surface of the Si film. CONSTITUTION:A field oxide film 12 is formed on a P-type Si substrate 11 and is oxidized thermally to form an oxide film 13 in an insular region. After an n<+> type diffusion layer 14 is formed, a polysilicon film 15 i deposited over the entire surface. After an SiO2 film 16 is spread over the entire surface, Ar ions are implanted from the film 16 so as to form a density peak of a defect layer in a boundary of the films 15 and 16. The film 16 is removed and a resist pattern 17 is arranged on the film 15. By chemical dry etching using a pattern 17 as a mask, a capacitor electrode 18 without a horny projection is formed. An SiO2 film 19 is deposited over the whole surface and a wiring 20 is arranged on that. As there is no difference in level, disconnection of the wiring 20 can be eliminated. |
