发明名称 DEVICE FOR REACTIVE ION ETCHING
摘要 PURPOSE:To prevent the formation of a high electric field in the vicinity of a cathode by arranging an electrode between an anode and a cathode and enabling the separate application of a voltage to the anode and cathode. CONSTITUTION:An electrode 15 is arranged between an anode 11 and a cathode 13. The electrode 15 is the reticular Al electrode which is grounded and screens the anode 11 from the cathode 13 by potential whereas it allows ions and electrons to pass freely. A high-frequency power 12 of high power is applied to the anode 11 and a high-frequency power 14 of relatively low power is applied to the cathode 13. A high-density plasma is generated between the anode 11 and the electrode 15 and it is drawn between the cathode 13 and the electrode 15. Thus the bias voltage produced in the vicinity of the cathode is reduced and a damage on the surface of the substrate 2 due to ion bombardment is prevented.
申请公布号 JPS61150335(A) 申请公布日期 1986.07.09
申请号 JP19840275348 申请日期 1984.12.25
申请人 FUJITSU LTD 发明人 SUDO ATSUSHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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