| 摘要 |
PURPOSE:To enable the anisotropic etching of a few damages without decreasing an etching rate by irradiating the predetermined region in an etching chamber with the light including the wavelength absorbed by the gas introduced into the etching chamber. CONSTITUTION:On the side walls of a vacuum chamber 11 forming an etching chamber, windows made of transparent plates 21 and 22 are formed. In this constitution, the light 24 from a light source 23 irradiates a discharge region between electrodes 12 and 13 through the plate 21 and is led out through the plate 22. For a sample 16, N<+> polysilicon is used and Cl2 is introduced thereby effecting the etching using an excimer laser as a light source. The etching rate is much faster than that when light irradiation is not utilized and a damage is hardly seen. Since this method is able to make a difference in potential smaller and the etching rate faster besides to reduce damages, it is suitable for the minute processing. |
