发明名称 READING CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 PURPOSE:To carry out a reading at high speed under a small voltage by connecting a sense circuit disposed correspondingly to a bit line, to the bit line under a separated condition after initializing, and reading. CONSTITUTION:A CK11 is turned off in the vicinity of a Cl2 and almost at the same time a sense circuit control signal phiS1 is turned on. At this time, since the sense circuit S1 is separated from bit lines B,-B, it does not receive influences of capacities C11C12 of the bit lines but obtains a rapid reponse speed. When an input and an output BS1,-BS1 of the circuit S1 are determined, a CK 15 is turned on, a CK16 is turned off and an input and an output of the sense circuit is changed over from BS2,-BS2 to the BS1, -BS1. The BS2,-BS2 are precharged by a CK14. While, after the bit line is turned off in the word line Cl2, it is precharged in a phip. In this manner, an amplitude of the bit line of the operating voltage is made small, and a high speed and a low power consump tion can be attained.
申请公布号 JPS61150183(A) 申请公布日期 1986.07.08
申请号 JP19840277094 申请日期 1984.12.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ICHINOHE EISUKE;YAMAGUCHI SEIJI;SHOREN SHIROJI
分类号 G11C11/34 主分类号 G11C11/34
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