| 摘要 |
A temperature stabilizing circuit for a microwave oscillator employing a field effect transistor on an AsGa substrate, in which a temperature-stabilized frequency is obtained by varying the gate-channel capacitance of an FET included in the oscillator resonance circuit. The capacitance is controlled by a voltage derived from a voltage divider comprising a series arrangement of several Schottky diodes or FET's. The circuit is suited to assembly as an integrated monolithic circuit comprising FETs on a AsGa substrate, for micro wave frequency applications such as for example, processing 12 GHz satellite television signals.
|
