发明名称 EXPOSING METHOD AND APPARATUS THEREFOR
摘要 PURPOSE:To prevent thickness of a photo resist film from decreasing, by expos ing with high-energy light the surface portion of the photo resist film to be optically polymerized in the early stages of exposure, and then by irradiating onto the photo resist film composite rays consisting of g-rays, h-rays and i-rays of emission spectrum by which a standing wave phenomenon becomes difficult to occur in the photo resist film. CONSTITUTION:First, i rays of emission spectrum with a high energy are irradi ated on a photo resist film 7 during the exposure. Polymerization is promoted by the aid of a cross linking agent without reacting with oxygen which may be left a little at the surface portion of the photo resist film 7, forming reliably a polymerized layer 25 in a short time. Next, composite rays consisting of g-rays, h-rays and i-rays are transmitted through the photo resist film 7. Since polymerization in the photo resist film 7 is promoted and at the same time the composite rays interfere with each other, a standing wave is prevented from occuring in the photo resist 7 and the polymerization in the photo resist film 7 can be uniformed in the direction of the thickness.
申请公布号 JPS61150217(A) 申请公布日期 1986.07.08
申请号 JP19840270849 申请日期 1984.12.24
申请人 HITACHI LTD 发明人 ONO RYOICHI;TSUKAGOSHI MASAKI
分类号 G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/20
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