| 摘要 |
PURPOSE:To enable short-time production by dry etching in carbon tetrafluoride gas or a gas containing carbon tetrafluoride gas, etching in a heated salt solution, and forming a Schottky electrode on the Si carbide semiconductor substrate surface. CONSTITUTION:An Si carbide single crystal layer 2 is formed on a P-type Si substrate 1. Next, the surface layer is removed by plasma-etching this single crystal wafer in the gas plasma of a mixed gas of carbon tetrafluoride gas with oxygen gas. Further, the whole is etched in a 20% heated solution of potassium carbonate. Nickel is evaporated to the removal surface and heat- treated into an ohmic electrode 3; thereafter, a Schottky diode is produced by evaporating e.g. Au as the Schottky electrode 4. |
