| 摘要 |
PURPOSE:To enable the decrease in ON-resistance without deteriorating other characteristics, by a method wherein at least part of the drain region is formed out of a Schottky barrier. CONSTITUTION:The titled element consists of a Schottky metal 1, semiconductor substrate 2, channel diffused layers 3, source diffused layers 4, source electrodes 5, and a gate electrode 6. In other words, the drain region is not made N<+> or P<+> but made Schottky junction. Since the Schottky junction gets a small amount of mirror carrier injection and is very high in switching speed, a Schottky junction is used for the drain region of a vertical MOS transistor so as to largely reduce the resistance of the semiconductor substrate region 2 without damaging the characteristics of the MOS transistor. |
