| 摘要 |
PURPOSE:To enable the maintenance of high withstand voltage by a method wherein the part of a field plate electrode corresponding to a field plate region is formed out of a semi-insulation substance low-specific-resistant enough to be used as the electrode and photo permeable. CONSTITUTION:The first insulation layer 14 is formed on the main surfaces of a semiconductor substrate 11 and a semiconductor region 12 so as to spread out of this region 12 by covering the surface exposed part 13 of the P-N junction plane. The first semi-insulation layer 15 highly-specific-resistant is formed outside this first insulation layer 14. The layer 14 is provided with the second semi- insulation layer 16 photo-permeable and low-specific-resistant enough to be used as the electrode. A metallic contact electrode 18 on the main surface of the semiconductor region 12 is electrically connected to the second semi- insulation layer 16 low-specific-resistant; thereby, both can be regarded as a continuous field plate electrode 19, and the titled device of field plate structure is constructed. |
