| 摘要 |
PURPOSE:To contrive to improve the adhesion of the high melting point metal with the insulation film by a method wherein the titled device is so constructed as to have electrode wirings formed out of a conductive film made mainly of a high melting point metal and containing a specific amount of Si oxide. CONSTITUTION:A high melting point metal containing Si oxide at 1ppm or more and 40% or less is used as electrode wirings. For example, after formation of a gate SiO2 film 2 over an Si crystal substrate 1, a film 3 containing approx. 0.5wt% of Si is adhered by CVD. Next, the Si in the W film 3 is changed to SiO2 by heating in an H2 containing 5% of H2O. After As ions are implanted by using the mask of an electrode pattern of this double-layer film, source-drain regions 5 are formed by heating in an N2 atmosphere. A phosphorus glass film 4' is adhered and dry-etched into contact holes above the source-drain regions 5, and Al wirings 6 are formed. |
