发明名称 De-glitch circuitry for video game memories
摘要 De-glitch circuitry selectively responds to the time duration of actuation signals for selecting between pages in a read only memory. The de-glitch circuitry uses MOSFET transistors to act as resistors and capacitors in order to provide an RC time constant. The RC time constant is selected to allow the de-glitch circuitry to eliminate spurious glitches and prevent unwanted segment selections in the memory. The de-glitch circuitry is used with a voltage reference generator, segment selection decoders, sense amplifiers, and a flip-flop; all of which are constructed of MOSFET transistors and incorporated in a read only memory integrated circuit chip. The de-glitch circuitry is particularly useful in the construction of program cartridges for video game computer systems.
申请公布号 US4599525(A) 申请公布日期 1986.07.08
申请号 US19830463093 申请日期 1983.02.02
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 TZENG, CHIN-PYNG J.
分类号 G11C8/12;H03K5/1252;(IPC1-7):H03K17/16;H03K17/284 主分类号 G11C8/12
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