| 摘要 |
PURPOSE:To enable the use of a photomask in the far ultraviolet region and to improve work efficiency by forming the fine pattern of the thin film of a light shielding metal and the pattern of the thin film of a metallic oxide which is translucent in the visible region and shields the rays of light in the required wavelength region on the surface of a substrate. CONSTITUTION:The thin metallic film for forming a light shielding fine pattern such as the pattern 2 of a thin Cr film and the pattern 4 of the thin film of the metallic oxide which is translucent in the visible region and shields the rays of light in the required wavelength region are formed on the surface of a substrate 1 to obtain a photomask used in the production of a semiconductor device by a photomechanical process. Ferric oxide is preferably used as the metallic oxide of the thin film 4. The resulting photomask has high contrast and resolving power peculiar to the thin Cr film and gives high work efficiency owing to the translucency of the thin ferric oxide film in the visible region. Since the thickness of the oxide film is only about several thousand Angstrom , blurring is hardly caused by diffraction or interference. The photomask can be used for a long period because of the high surface hardness. |
