发明名称 INPUT CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce an operating power source current approximate to DC by adding a feedback inverter for positively feeding back a part of an output to an inverter of an input circuit and a p type or an n type MOSFET to a previous stage of the output. CONSTITUTION:When a circuit threshold voltage of an input inverter 3 (INV3) is smaller than an electric potential V (=VDD-voltage of MOSFET 2) of a circuit point 5 and smaller than a VIH of a TTL input level, an electric potential of an output terminal 6 of the INV 3 is lowered to a ground level. Further, since this potential is inputted to a gate of a feedback inverter 4 (INV 4), when the potential of the circuit point 5 is raised to go above V, the MOSFET 2 is turned off, thereby the circuit point 5 is raised to VDD. Accordingly, a p type MOSFET 7 of the INV 3 is completely turned off and a penetrating electric current through the INV 3 and the INV 4 does not exist. As a result, also in the case of inputting the signal VIH by the TTL input level, the penetrating electric current opproximate to DC of the INV 3 can be reduced.
申请公布号 JPS61150182(A) 申请公布日期 1986.07.08
申请号 JP19840277093 申请日期 1984.12.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SHOREN SHIROJI;KADOTA HIROSHI
分类号 G11C11/34 主分类号 G11C11/34
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