发明名称 MEMORY CIRCUIT
摘要 PURPOSE:To reduce the number of reserve memories and make small an area of a chip by using an unsatisfactory RAM having plural unsatisfactory memory cells and operating it as one RAM. CONSTITUTION:When a memory cell in which an address signal AN is selected at a high electric potential is inferior, a fuse H2 is cut off. During a reading operation of a RAM, when the high electric potential is impressed to an address signal input terminal 4, an output circuit 3 is inactive by a comparison circuit 2 to be a non-selected condition. When a low potential is impressed to the terminal 4, the circuit 3 is activated. When the memory cell is faulty in which the terminal 4 is selected at the low electric potential is inferior, by cutting off a fuse H1, similarly, only when the faulty memory cell is selected, the circuit 3 can be inactive. In this way, by using two RAMs is which an output is in active when the faulty cell is selected, they can be operated as one RAM.
申请公布号 JPS61150200(A) 申请公布日期 1986.07.08
申请号 JP19840272402 申请日期 1984.12.24
申请人 NEC CORP 发明人 KOISHI KEIJI
分类号 G11C29/00;G11C29/04 主分类号 G11C29/00
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