发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To make a chip size in forming an integrated circuit small by providing a transistor for a load every plural column selecting lines or lines and disposing a decoder for operating a newly selecting FET. CONSTITUTION:Since loading transistors TWR1-TWRi are respectively disposed in common every four pairs of lines R1-R4, R5-R8,...Rm-3-Rm, respectively, the number of the loading transistors can b reduced to 1/4 of the conventional device. To the conventional device, four decoders 90 are newly required to be added. In anususal EPROM, the number of the loading transistors is remarkably large. Therefore, by decreasing the number of the loading transistors, even if four circuits of the decoders 90 are newly added, the number of the loading transistors can be drastically decreased.
申请公布号 JPS61150197(A) 申请公布日期 1986.07.08
申请号 JP19840278407 申请日期 1984.12.25
申请人 TOSHIBA CORP 发明人 ASANO MASAMICHI;IWAHASHI HIROSHI
分类号 G11C17/00;G11C16/06;H01L21/8246;H01L21/8247;H01L27/10;H01L27/112;H01L29/78;H01L29/788;H01L29/792 主分类号 G11C17/00
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