Semiconductor apparatus having a zener diode integral with a resistor-transistor combination

摘要

A semiconductor apparatus includes a p+-type region formed in the surface area of an n--type semiconductor layer formed on a p-type semiconductor substrate, and an n+-type region which is formed in a contact relationship with respect to the p+-type region and forms a Zener diode in conjunction with the p+-type region. A p-type region is further formed in the surface area of the semiconductor layer and is electrically connected to the n+-type region by a contact layer. The n+-type region forms a resistor between the contact layer and the p+-type region. The p-type region, semiconductor layer and substrate constitute a pnp transistor.