| 摘要 |
PURPOSE:To make it possible to prevent the decrease in a yield rate of a semiconductor integrated circuit devices, by activating a high-melting-point metal film of a silicide film, forming an insulating film covering at least said film, thereby suppressing exfoliation of an interface part. CONSTITUTION:On the upper part of a semiconductor substrate 1, a polycrystalline silicon film 5, in which impurities for decreasing a resistance value are introduced, is formed. A high-melting-point film or its silicide film 6A is formed on the film 5. Then, said high-melting-point film or the silicode film 6A is activated. An insulating film 7 covering at least said film is formed. For example, after the process for introducing impurities 8A, heat treatment process is performed, and the silicide film 6A is activated. A silicide film 6 having a resistance value of about 3-6 [OMEGA/square] is formed. The heat treat ment process is carried out in an atmosphere, in which a minute about of oxy gen is added in a carrier gas. Therefore the insulating film 7 made of a silicon oxide film covering the film 6 can be formed when the silicide film 6A is activat ed. The insulating film 7 prevents the diffusion of the impurities introduced in the polycrystalline silicon film 5 to the outside through the silicide film 6A. |
