| 摘要 |
PURPOSE:To enhance a voltage drop characteristic in a specified sequence and to provide high dv/dt resistance, by providing a gate wire in the close proximity of an aluminum electrode other than a pilot gate part. CONSTITUTION:A semiconductor substrate 20 is formed by sequentially laminat ing a P-type semiconductor layer 22, an N-type semiconductor layer 23, a P-type semiconductor layer 24 and an N<+> surface layer 25 from the side of a base body 21. The specified region of the P-type semiconductor layer 24 on the side of the main surface forms the exposed part of the intermediate layer. An N<+> conducting type auxiliary region 26 and an annular groove 27 are formed in the exposed part of the intermediate layer. A first electrode 28 is formed on the main surface of the N<+> surface layer 25. A second electrode 29 is formed on the auxiliary region 26. A gate 30 is formed on the specified region of the exposed part of the intermediate layer so as to face the second electrode 29. On the exposed part of the intermediate layer between the auxiliary region 26 and the second electrode 29 and the annular groove 27, a gate wire 31 is provided. A gate electrode is constituted by the gate 30 and the gate wire 31. |
