| 摘要 |
<p>PURPOSE:To shorten an inspection process by adding a memory element for measuring an access time to a number of non-volatile memory cell array constitution. CONSTITUTION:A memory cell array Q of a constitution of UV-EPROM, a memory cell transistor Q1 for measuring an access time is added. By providing such an excessive memory cell Q1, even if whole transistors of a main body of a memory cell array Q are written and when the adding memory cell Q1 is not written, the adding memory cell array Q1 equivalent to one transistor of the memory cell array Q is made access to measure an access time. Thereby, an erasing and an inspection of an inspection flow process in the conventional case can be omitted by one process.</p> |
