| 摘要 |
PURPOSE:To implement a double heterostructure Si semiconductor laser, which is constituted on an Si substrate, by alternately laminating two kinds of SiGe thin films having different composition rations, providing an active layer having a super lattice structure, and providing double-layer clad layers, whose main component is Si. CONSTITUTION:On a single crystal Si substrate 101, a first clad layer, an active layer and a second clad layer are provided. The first clad layer is, e.g., N-type Si 102 and can include slight Ge. The second clad layer is P-type Si 105 and can include slight Ge. The active layer, which performs laser oscillation, has a super lattice structure, in which Si1-xGex (0<=x<=1) thin film 104 and Si1-yGey (0<=y<=1, xnot equal to y) thin film 103 are alternately laminated. In the active layer consti tuted in this way, probability in direct transition is strikingly increased and emission of laser light becomes possible even if the constituent materials are indirect transition type Si and Ge. Thus the excellent semiconductor laser can be implemented stably at a low cost.
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