| 摘要 |
PURPOSE:To sublime and remove reactive product having tide resolution by etching a material to be etched coated with aluminum or aluminum alloy film on the surface by a plasma of chlorine gas in a vacuum chamber, and then removing the material from chamber to be heat treated. CONSTITUTION:After a shutter 5b is closed, mixture gas of BC3 and C2 is supplied from a gas intake tube 8 into an etching chamber 4, and gas in the chamber 4 is exhausted from an exhaust tube 13b. High frequency power is applied from a high frequency power source 12 to a lower electrode 7 to selectively etch an aluminum film. A shutter 5c is opened in the state that the gas is exhausted from an exhaust tube 13c, and a waver 19 is conveyed to a postpreliminary exhaust chamber 3b. The shutter 5c is closed, and the chamber 3b communicates with atmosphere. A shutter 5d is opened, the wafer 19 is removed, and conveyed on a hot plate 14. Simultaneously, dry nitrogen is supplied from an intake tube 18 into a hollow vessel 16, and nitrogen heated by a heater 17 is blown from the nozzle of a vessel 16 to the wafer 19. |
