| 摘要 |
PURPOSE:To suppress the damage of an element to the minimum limit by forming an SiO2 film under an Si3N4 film by a vapor phase growing method. CONSTITUTION:A hole for drawing an electrode is formed at an SiO2 film 8 formed on the surface of a substrate. An SiO2 film 14 is entirely grown by a vapor phase growing method, and an Si3N4 film 10 is grown by a reduced pressure vapor phase growing method. Then, the films 10, 14 of the hole are removed by dry etching to form holes. The, electrodes 11, 12, 13 are formed. Since the SiO2 film under the Si3N4 film is formed by a vapor phase growing method, the thickness of the SiO2 film of the hole of the diffused region is the same. |
