| 摘要 |
PURPOSE:To improve the linearity and sensitivity of an InSb temperature sensor at a low-temperature region by a method wherein forward current is made to flow to the P-N junction, which is constituted of the N-type InSb substrate and a P-type region to be formed in the surface of the substrate, and tempera ture from a drop in voltage on the P-N junction. CONSTITUTION:A P-type impurity, such as beryllium, magnesium, zinc and cadmium, is introduced in an N-type InSb substrate 1 according to a thermal diffusion or an ion-implantation to form a P-type region 2 and the P-N junction is constituted of the substrate 1 and the P-type region 2. Then, forward current, which is made to flow to the P-N junction, is set at such a constant value that the forward current exists on a region where the drop of voltage on the P-N junction changed linearly to a temperature to be measured. |
